IBM announced the first working static random access memory (SRAM) for the 22nm (nanometer) technology node. A nanometer is one one-billionth of a meter or about 80,000 times smaller than the width of a human hair. Worlds first and ever reported smallest working SRAM cell.
The SRAM cell utilizes a conventional six-transistor design and has an area of 0.1um2, breaking the previous SRAM scaling barriers. SRAM cell size is a key technology metric in the semiconductor industry, and this work demonstrates IBM and its partners’ continued leadership in cutting-edge process technology.
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22 nm is two generations away in chip manufacturing. The next generation is 32 nm, where IBM and its partners are in development with their leading 32 nm high-K metal gate technology.