Yesterday, Intel Corp and Micron Technology unveiled a new high-speed NAND flash memory technology that can greatly enhance data access and transfer in devices that use Silicon for storage.
The technology is jointly developed by Intel and Micron, and manufactured by the companies’ NAND flash joint venture (JV), IM Flash Technologies (IMFT). It promises five times the speed of conventional NAND, allowing data to be transferred in a fraction of time for computing, video, photography, and other consumer applications.
he new high-speed NAND promises speeds up to 200 megabytes per second (MB/s) for reading data, and 100 megabytes per second for writing data — thanks to the new ONFI 2.0 specification and a four-plane architecture with higher clock speeds.
In comparison, conventional single level cell NAND is limited to speeds of just 40 megabytes per second for reading data and less than 20 megabytes per second for writing data.
Speaking at the occasion, Frankie Roohparvar, vice president (NAND Development) of Micron said the company looks forward to unlocking newer possibilities with high-speed NAND. That they are working with an ecosystem of key enablers and partners to build and optimize corresponding system technologies that take advantage of its improved performance capabilities.
Pete Hazen, director (Marketing) of Intel NAND Products Group, said the computing market is embracing NAND-based solutions to accelerate system performance through the use of caching and solid-state drives. At up to five times the performance over conventional NAND, the high speed NAND from Intel and Micron will enable new embedded solutions and removable solutions that take advantage of high-performance system interfaces, including PCIe and upcoming standards such as USB 3.0.
source:techtree